Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High?Entropy Oxides

نویسندگان

چکیده

Memristors have emerged as transformative devices to enable neuromorphic and in-memory computing, where success requires the identification development of materials that can overcome challenges in retention device variability. Here, high-entropy oxide composed Zr, Hf, Nb, Ta, Mo, W oxides is first demonstrated a switching material for valence change memory. This multielement provides uniform distribution higher concentration oxygen vacancies, limiting stochastic behavior resistive switching. (Zr, W) high-entropy-oxide-based memristors manifest “cocktail effect,” exhibiting comparable with HfO2- or Ta2O5-based while also demonstrating gradual conductance modulation observed WO3-based memristors. The electrical characterization these demonstrates forming-free operation, low cycle variability, modulation, 6-bit long which are promising applications.

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ژورنال

عنوان ژورنال: Advanced electronic materials

سال: 2021

ISSN: ['2199-160X']

DOI: https://doi.org/10.1002/aelm.202001258